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| CHONGQING PINGYANG ELECTRONICS CO.,LTD. BR1005 THRU BR1010 SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE50-1000V CURRENT10.0A FEATURES *Surge overload ratings-250 Amperes *Low forward voltage drop KBPC-8/10 .296(7.5) .255(6.5) .052(1.3) DIA. .048(1.2) TYP. .770(19.6) .730(18.5) .520(13.2) .480(12.2) .750 (19.1) MIN. HOLE FOR NO. 6 SCREW .520(13.2) .770(19.6) .480(12.2) .730(18.5) MECHANICAL DATA * Case:Metal or plastic shell with plastic encapsulation *Epoxy: UL 94V-0 rate flame retardant *Lead: MIL-STD- 202E, Method 208 guaranteed *Polarity: Symbols molded or marked on body *Mounting: Thru hole for 6# screw *Weight: 6.9 grams Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz,resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL BR1005 BR101 BR102 BR104 BR106 BR108 BR1010 units Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward rectified Output Current at TC=75C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) Maximum Forward Voltage Drop per element at 5.0A DC Maximum DC Reverse Current @ TA=25C at Rated DC Blocking Voltage @ TA=100C per element VRRM VRMS VDC Io IFSM VF IR 2 50 35 50 100 70 100 200 140 200 400 280 400 10 250 1.1 10 500 600 420 600 800 560 800 1000 700 1000 V V V A A V A 2 It 166 AS I2t Rating for Fusing (t<8.3ms) CJ 200 pF Typical Junction Capacitance (Note 1) Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts 2. Thermal Resistance from Junction to Ambient and fromjunction to lead mounted on P.C.B. with 0.5x0.5"(13x13mm) copper pads. PDF "pdfFactory Pro" www.fineprint.cn |
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